The local density approximation (LDA) is shown to be inadequate for calculating the band-gap narrowing.
It has been shown that convoluted elements offer a substantial reduction in band gap frequency of 42% for a given lattice periodicity.
Silicon carbide (Eg ~ 3 eV) has begun to establish itself as an effective wide band-gap semiconductor.
The research work centers on the development of LEDs and photodiodes using narrow band-gap semiconductors, in particular indium antimonide and cadmium mercury telluride.