Converse of object

• add: Atomic level defects, such as atoms of differing mass, vacancies etc. can be introduced by adding dopants or by ion bombardment.

Adjective modifier

• chiral: A high correlation has been found between the scaled index and helical twisting power for a range of chiral dopants.

• random: We consider random discrete dopants, trapped charges, atomic-scale interface roughness, and line edge roughness as sources of intrinsic parameter fluctuations.

• other: Similar defects are also likely to account for the low activation efficiencies of other dopants in different materials, eg.

• discrete: We consider random discrete dopants, trapped charges, atomic-scale interface roughness, and line edge roughness as sources of intrinsic parameter fluctuations.

Modifies a noun

• atom: The problem lies in the technique used to introduce dopant atoms into the silicon to make these layers; ion implantation.

• activation: Different rapid thermal annealing treatments are used and the dopant activation and deactivation studied.

• concentration: The technique is principally used to measure local dopant concentrations in semiconductor devices.

• distribution: We have used off-axis electron holography to determine the 2-D dopant distribution in a SiC MESFET.

• profile: This method is particularly well suited for use on dopant profiles as analyzed in AES.

• diffusion: Modeling and simulation of dopant diffusion and atomic interactions, in collaboration with PhD colleagues working on modeling.

Preposition: in

• semiconductor: Designing dopants in semiconductors: the conversion of deep level defects into shallow ones.

• region: The use of optically active dopants in the active region of this device enables the emission wavelength to be tuned.